爱彩网爱快乐时时彩:VitoGaN

云南快乐时时彩2019123 www.ovvwkq.com.cn VitoGaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

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VitoGaN

Drag and drop parameters to add, remove, and reorder.

  • RDS(ON) Max 3.3V(mΩ)
  • RDS(ON) Max 2.5V(mΩ)
  • RDS(ON) Max 1.8V(mΩ)
  • Qg Typ(nC)
  • Qgd Typ(nC)
  • Rth(JC) °C/W
  • Power Dissipation TA=25℃(W)
  • Power Dissipation TC=25℃(W)
  • MSL
  • HG-FREE
  • Part
  • Status
  • Type
  • Esd
  • Package
  • BVDSS[V]
  • VGS Max[±V]
  • VTH Typ[V]
  • RDS(ON) Max 10V(mΩ)
  • RDS(ON) Max 4.5V(mΩ)
  • ID(A)@25℃
Part
Esd
BVDSS[V]
1200 -200
VGS Max[±V]
100 -100
VTH Typ[V]
10 -10
ID(A)@25℃
300 -300
NEW
Cascode GaN
NO
TO-247
650
20
2.0
200.0
230.0
20.0